CXT5551E transistor equivalent, surface mount npn silicon transistor.
* High Collector Breakdown Voltage: 250V
* Low Leakage Current: 50nA MAX
* Low Saturation Voltage: 100mV MAX @ 50mA
* Complementary Device: CXT5401E
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requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
* General purpose switching a.
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